- 作者: 郭雙發
- 作者服務機構: 國立交通大學工學院
- 中文摘要: 本文報告桶旅荷移器之設計準則,製作技術,及電路性能。設計考慮包括固有轉移率,動態洩導,儲容調變,及漏電等裝置參數。此項研究工作使用常用的鋁閘金氧半積體電路技術,製成一種六級並出,一種十級,及一種十五級串出桶旅電路。這些裝置可以用作數位及類比移錄器,其遲延時間可由鐘頻來控制。實驗結果與理論頗為一致,在最佳運作條件下,於鐘頻為500兆赫時,可以得到每級99.7%的轉移效率。
- 英文摘要: The design criteria,fabrication techniques, and circuit performance ofbucket-brigade charge-transfer devices are reported in this paper. Theconventional aluminum gate MOS integrated circuit technology is used inthis work. The device parameters, such as intrinsic transfer rate, dynamicdrain conductance,storage capacitance modulation and current leakage, areconsidered.A 6-stage parallel output,a 10-stage and a 15-stage series out-put bucket-brigade circuits have been fabricated.The devices can be operatedas both digital and analog shift registors, and the delay time can be con-trolled by the clock frequency. The experimental results show a qualitativeagreement with the theory. The transfer’efficiency of 99.7% per transfercould be obtained under optimal operating conditions with clock frequencyabout 500 KHz.
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