• 作者： 李玟良; 蘇炎坤; 張守進
• 作者服務機構： 國立成功大學電機工程研究所
• 中文摘要： 本文使用轉移矩陣法理論分析具有被動波導結構之GaInP/AlGaInP可見光量子井雷射。研究被動波導結構對於半導體雷射遠場垂直散射角之影響，並探討其對於光腔中光侷限因子之影響，進而設計最佳化結構。在精確選擇結構參數下，遠場垂直散射角可降低至18° FWHM，而光侷限因子僅下降0.3%。
• 英文摘要： The design of a GalnP/AlGalnP visible separate confinement heterostructure quantum well (SCH-QW) laser with passive waveguides is theoretically investigated using the transfer matrix method．Byusing this structure, we can significantly improve the transverse beam divergence with only a slight decreaseof the optical confinement factor. With proper choice of parameters, a transverse beam divergence asnarrow as 18° full width at half maximum (FWHM) can be achieved while the optical confinement factoronly decreases by 0．3％compared to that of a laser without the passive waveguide structure．
• 中文關鍵字： laser diode; semiconductor laser; transverse beam dispersion
• 英文關鍵字： --