第8卷‧第3期,
198003
, pp. 275-283
金屬薄膜因電流引起質量遷移效應所生形變狀態之研究
- 作者:
趙一雄
- 作者服務機構:
私立大同工學院
- 中文摘要:
金屬薄膜通電流所引起之質量遷移效應,其所以會在某些晶界處形成凹陷或隆起之突出,端視晶界處二晶粒間之表面自由能和晶界能於穩定狀態時之平衡條件而定。於平衡狀態時,晶界處為凹陷之溝槽時,質量流通發散的原因以電流聚擠效應為主,若晶界處為隆起之突出時,質量流通發散的原因,以表面曲率變化所致使擴散離子密度之梯度為主。本文據此藉求解薄膜表面斜角變化之微分方程式,以求得雙晶薄膜因質量遷移所造成的形變狀態。又擴散活動能對於薄膜形變狀態的影響,於文末予以定性的討論。
- 英文摘要:
The electromigration failure modes, appearedin the form of fine crack type or bump typein the grain boundaries of thin-film metalliza-tions, are dependent on the equilibrium condi-tions of the surface free energy and the grainboundary energy at the intersection of the grainboundaries in their embryonic stage. Some pre-dominant factors that contribute to the massflux divergence at the edge of the cracking orbump type defect are discussed. A mathema-tical analysis of the time development of surfacemorphology is carried out by solving the partialdifferential equation of the slop of the bicrystalsurface profile. Finally, a brief discussion ismade in relation to the diffusion activationenergy and the surface morphological changes.
- 中文關鍵字:
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- 英文關鍵字:
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