• 作者： 黃宏欣; 洪敏雄
• 作者服務機構： 國立成功大學材料科學及工程學系
• 中文摘要： 鑽石集各種優異性質於一身，可應用於電子、耐磨耗及光學等方面。鑽石同時具最高熱傳導率、低介電常數及電的絕緣性，極適合應用於電子構裝上，作為模組之散熱板。 以微波電漿化學氣相沉積法製備鑽石膜於矽基板，可藉由調整實驗參數及配置，加大沉積面積至20×20，以X光繞射、拉曼分析，鑽石品質如同小面積成長一般；其成長速率為0.5μm/hr。以X光繞射分析，鑽石膜之優先取向為(220)，以哈里士法分析，(220)面之TC值為(111)之3倍多，且隨時間增加而持續增加。鑽石膜經長時間成長於矽晶片上，其殘留應力呈現漸減趨勢，由沉積10小時之2.4 GPa漸減至成長52小時之1.24 GPa；殘留應力之減少可能先沉積之鑽石膜受到後來沉積溫度之退火，而使膜中殘留應力遞減；而鑽石膜表面粗糙度由成長10小時之0.03μm則隨沉積時間而漸增，但成長52小時之後，鑽石膜之表面粗糙度依然低於0.2μm。 由以上研究可知，鑽石膜適合應用於電子構裝上，經長時間成長，以(220)為優先取向，而殘留應力隨時間增加而遞減，表面粗糙度雖然漸增，但成長52小時後依然低於0.2μm。
• 英文摘要： Diamond films are attractive for many applications due to their superior properties. There is potentialfor diamond films to be used as a heat sink in electronic packaging applications. The microstructure andresidual stress of diamond films prepared by microwave plasma enhanced chemical vapor deposition(MPCVD) were studied for long term deposition. For multichip modules (MCM) heat sink application, the deposition area of diamond films depositedby MPCVD was enlarged to 20x20 near the limit of the plasma zone in these studies. The qualityof diamond films was analyzed by the X-ray diffractometer, Raman scattering and SEM. The growthrate of diamond films were 0.5 μm/hr. As determined by X-ray diffraction analysis, the preferred orientationof diamond films is (220). According to the Harris method analysis, the texture coefficient of (220) increasedwith the deposition time when diamond films were continuously deposited. The residual stress of diamondfilms decreased with the deposition time from 2.4 GPa for 10 hours of deposition to 1.24 GPa for 52hours of deposition. For long term deposition, diamond films were annealed at deposition temperaturemight reduce the residual stress. The roughness of diamond films increased with the deposition time from0.03 μm for 10 hours of deposition to 0.15 μm for 52 hours of deposition owing to grain growth.
• 中文關鍵字： heat sink; internal stress; diamond films; MPCVD
• 英文關鍵字： --