- 作者: 顏伯甫; 陳冠能; 吳南均
- 作者服務機構: 國立成功大學材料科學及工程學系
- 中文摘要: 本研究使用射頻磁控濺射法,分別以氮化鋁靶、鋁靶為靶材,通入氫氣與氮氣之混合氣體,在矽晶片及玻璃基板上沈積氮化鋁薄膜。並藉由改變射頻功率、工作壓力、氮氬濃度比,以獲得高結晶品質之C軸優先取向之氮化鋁薄膜,使其對未來製作封裝基板材料時能有所助益“
- 英文摘要: AIN thin films on silicon and glass substrates were prepared using an r.f. (radio frequency) magnetronsputtering technique.Films were deposited by sputtering from either an Al or an AIN target. Theexperimental results indicated that the optimum sputtering conditions were a chamber pressure of 3 mTorr,NZ/Ar ratios of 0.15 (for AIN target) and 0.5 (for Al target), an r.f. power of 400 W or more and substrateat room temperature. The deposition rate of film, when the r.f. power was set at 400 W, was 28-32 nm/min using the A1 target and 38-42 nm/min using the AIN target. The AIN film was found to have excellentsurface flatness, an Al/N atomic ratio close to 1,and a C-axis preferred orientation.SEM observationsshowed that columnar grains existed in the AIN film. The electric resistivity and the specific dielectricconstant of the AlN thin film were (方程式無法摘錄) and 10 from I-V and C-V curves,respectively.
- 中文關鍵字: AIN; r.f. magnetron sputtering; C-axis preferred orientation
- 英文關鍵字: --