• 作者： 葉國良; 鄭明哲; 胡振國
• 作者服務機構： 國立台灣大學電機工程學研究所; 新埔工商專科學校電子工程科
• 中文摘要： 本文是研究以室溫液相沉積法後經快速熱氧化處理所備製之含氟薄氧化層的特性。實驗是以二種快速熱氧化壓力來進行，即大氣壓力(760 torr)及低壓(600 torr)。從實驗得知較佳的室溫液相沉積經快速熱大氣壓力氧化處理所成長之薄氧化層，具有增加氧化層之電荷累積崩潰特性但卻降低其崩潰電場。但是若降低快速熱氧化壓力時，其所成長之氧化層不但可增加氧化層的電荷累積崩潰特性，亦可增強其崩潰電場。歸究其原因可能是由於在薄氧化層之零時問崩潰電場測試時，氧化層內固定電荷的分佈將扮演一個重要角色。另外，亦發現液相沉積的時閒及之後快速熱氧化的壓力及時問，可用來控制薄氧化層內氟的含量及電荷的分佈情形。
• 英文摘要： Room temperature liquid phase deposition (LPD) followed by rapid thermal oxidation (RTO) wasused to prepare thin fluorinated oxides (LPD/RTO)．Both atmosphere (760 torr) and low pressure (600torr) rapid thermal oxidation, i.e.，ARTO and LRTO, respectively, were examined. It was found that thebest LPD/ARTO oxide exhibited enhanced charge-to breakdown QBD but degraded oxide breakdown fieldEBD．However, when the oxidation pressure was reduced, the best LPD/LRTO oxide exhibited improvedcharacteristics in both QBD and EBD. It is supposed that the fixed oxide charge distribution in thin oxidesplays an important role in characterizing the time-zero dielectric breakdown (TZDB) behavior. Further-more, both the LPD time and the following RTO pressure and time can be used to control the fluorinecontent or the charge distribution in LPD/RTO oxides．
• 中文關鍵字： liquid phase deposition(LPD); rapid thermal oxidation(RTO); time-zero dielectric break-down(TZDB); charge-to-breakdown(QBD); oxide breakdown field(EBD)
• 英文關鍵字： --