• 作者： Chen, Wen-Chang; Yen, Cheng Tyng; Dai, Bau-Tong; Tsai, Ming- Shih
• 中文摘要： 本研究探討兩種低介電常數高分子材料(PAE-2及Flare2.0)之薄膜性質及其化學機械研磨特性。首先分析高分子薄膜之分子結構, 熱應力性質及介電常數。其次由分子結構之剛硬性。不同研磨粉末(SiO/sub 2/及Al/sub 2/O/sub 3 /)及兩種界面活性劑(Triton X-100及DSSS)探討薄膜化學機械研磨速率及研磨表面性質。實驗結果顯示薄膜機械性質, 粉末硬度, 研磨液pH值及界面活性劑對薄膜化學機械研磨特性有重要影響。Flare 2.0因較PAE-2之擁有較剛硬結構因此研磨速率較低小。所使用Al/sub 2/O/sub 3/粉末硬度較SiO/sub 2/大而增加研磨速率。研磨液pH值及界面活性劑則影響粉末與高分子之接觸面及電荷吸斥力進而影響研磨速率。
• 英文摘要： In this article, the film properties and chemical- mechanical polishing (CMP) characteristics of two different low dielectric constant poly (arylene ethers): PAE-2 and Flare 2.0 were studied. The molecular structure, thermal- stress properties, and dielectric constant of the polymer films were characterized. The removal rates and surface properties of the polished films were investigated by the following parameters: structural rigidity, types of abrasives, and various charge status of surfactants (Triton X-100 and DSSS). The experimental results show that the mechanical properties of polymer films, the abrasive hardness and surfactant affected significantly the CMP characteristics. The mechanical property of the PAE-2 film was inferior to the Flare 2.0 film and thus a higher polishing rate was found for the PAE-2 film than the Flare 2.0 film. The order of the removal rates for both polished films was 8105 > 8104 > SS-25, which was the same trend as the hardness of the abrasive. The addition of surfactants into the slurries significantly modified the surface contact area and the electrostatic force between the abrasive and the polymer film. Therefore, the polishing rate was affected by surfactants.
• 中文關鍵字： 化學機械研磨; 低介電常數高分子; 研磨液; 磨損; 界面活性劑
• 英文關鍵字： Cmp; Low K Polymers; Slurry; Abrasive; Surfactant