• 作者： 陳茂傑
• 作者服務機構： 國立交通大學
• 中文摘要： 本文述及以五氧化二鈮（Nb2O5）作為陰極標的，而藉RF噴鍍法堆積氧化鈮薄膜於矽晶片上。實驗顯示氧化鈮薄膜的堆積速率依噴鍍時所用的氣體成份而變化甚大。在氬氣中混入少量的氧氣可使堆積速率降低50%以上。另一方面，氬氣中氧氣含量的減少可使所堆積氧化鋸薄膜的導電性變大，其原因可能是由於Nb2O5受到氬（A）離子的撞擊而發生化學成份之改變。若將堆積氧化鈮薄膜的矽晶片在氧氣中作1100oC的熱處理1小時，則在氧化鈮薄膜和矽晶片之間的界面上很可能已長出一層氧化矽薄膜。此外，高功率密度的噴鍍可使矽晶片的表面性質發生劣化現象。
• 英文摘要： Niobium oxide films were prepared by rf sputtering technique using aniobium pentoxide (Nb2O5) target. It is found that the deposition rate ofNb2O5 is greatly dependent upon the discharge gas used in sputtering. Asmall percentage of O2 in the argon discharge gas leads to a reduction inthe deposition rate of more than 50%. As the amount of O2 in the argondischarge is reduced, the deposited niobium oxide become much conduc-tive, probably due to chemical reduction of Nb2O5 by argon bombardment.A layer of silicon oxide is likely present between the Nb2O5 and the siliconsubstrate after the specimen (Nb2O5 film deposited silicon wafer) was sub-jected to a 1100 oC heat treatment in an oxygen atmosphere for one hour.The deterioration of the silicon surface properties by using high powerdensity sputtering was observed.
• 中文關鍵字： --
• 英文關鍵字： --