• 作者： 李子琦;陳正宗; 全湘偉; 孫澄源
• 作者服務機構： 聯合工商專校電子工程科;海洋大學河海工程系; 中山科學研究院; 工業技術學院電子工程技術系
• 中文摘要： 對於用以解析深次微米線寬之X光成像術而言，其光罩結構在承受高強度X光輻射時所引發之熱不穩定性，仍為一關鍵性課題。為了探討X光光罩在曝光時之熱效應，本文應用三維固體元有限元素分析技術配合設計導向方法來模擬矽一鎢光罩結構之瞬間溫度變化、熱應力與位移分佈。根據計算結果得知：（1)最大溫度值發生在鎢膜構體分佈密度最高之區域；(2)熱應力通常集中在矽一鎢介面與鎢膜構體轉角處；(3)熱彈性位移往光罩外徑邊緣移動。而針對256Mb動態隨機記憶體所需之0.25微米設計規範之X光光罩來說，光罩之溫度變化必須維持在3.42°C之範圍內，以控制其熱彈性變形量在25nm之容許值以內。
• 英文摘要： In X-ray lithography at deep submicron linewidths, the occurrence of thermal-induced dimensionalinstability of the mask structure under high-intensity X-ray irradiation is still a critical issue. To investigatethe thermal effects of lithographic mask, a three-dimensional finite element technique in combination witha design-oriented methodology was used to simulate the distributions of temperature, stress, and displace-ment on an X-ray mask, which consisted of a thin silicon (Si) membrane carrying tungsten (W) absorberpatterns. Some important results were derived from the present analysis: (1)the maximum temperaturesoccurred in the regions where the W absorber patterns were most densely populated; (2) the thermal stressesusually centered on the Si-W interface and the edges of W absorber; and (3) the thermoelastic displacementswere directed from the center in the mask towards the mask edges. It was also shown that, for a maskstructure with 0.25-μm minimum linewidth corresponding to the design rules of 256 Mb DRAM, the masktemperature variation must be maintained within 3.42 °C to suppress microdistortion to within the acceptablelimit of 25 nm.
• 中文關鍵字： X-ray lithography; thermal-induced dimensional instability; mask structure; finite element technique; silicon membrane; tungsten absorber microdistortion
• 英文關鍵字： --