- 作者: 何侗民
- 作者服務機構: 中央研究院化學研究所
- 中文摘要: 矽半導體內中性鎂施者所形成的激發光譜,經研究發現各光譜線的強度隨時間而逐漸遞減,但其位置不變,故中性鎂雜質在矽內的基態能量不會隨時間而產生變化。激發譜線的吸收係數,則與鎂雜質進入矽晶體後的時間長短有關,其關係經發現為α(t)═αoe-o.o4t,此現象的形成,可能是由於矽中的鎂雜質在室溫下產生沉澱作用,又因矽晶體中含有氧,鎂與氧之問所產生的交互作用也可能是該含時效應的原因之一。
- 英文摘要:
The photoexcitation spectrum of neutral magnesium donors in silicon
is studied. The intensity of the excitation lines is observed to decrease with
time. The positions of the excitation lines, however, remain to be the same
indicating that the time has no effect on the ground state. The absorption
coefficient of the excitation lines is found to depend on the sample age
following the relation α(t)═α。e??? ,where t is in month. This time de-
pendence can be partially accounted for by precipitation of magnesium at
room temperature. Since the sample contains large amount of oxygen, a
magnesium-oxygen interaction may also be one of the reasons for the time-
dependent effect of neutral magnesium donor lines in silicon. - 中文關鍵字: --
- 英文關鍵字: --