- 作者: 莊琇惠,裘性天,周宜萱,陳秀帆
- 作者服務機構: Department of Applied Chemistry, National University of Kaohsiung, Kaohsiung 811, Taiwan, R.O.C.
- 中文摘要: An organoimido complex of tungsten, bis(tertbutylimido)bis(diethylamido)tungsten, W(NtBu)2(NEt2)2, is used as a single source precursor to deposit thin films of cubic phase tungsten carbonitride, WCxNy (x: 0.21-0.38, y: 0.62-0.76), by metal-organic chemical vapor deposition on silicon substrates. In general, the N/W and C/W ratios decreased from 0.76 to 0.62 and 0.38 to 0.21, respectively with increasing the temperature of deposition from 500 to 650 °C. Based on the elemental composition and the composition of the gas phase products, it is proposed that the carbon and nitrogen atoms were incorporated through the activation of the ligands.
- 英文摘要: --
- 中文關鍵字: Tungsten nitride; Tungsten carbonitride; Chemical vapor deposition.
- 英文關鍵字: --