- 作者: Lurng-Shehng Lee, Chung-Len Lee, Denny Duan-Lee Tang, Tsing-Tyan Yang, Li-Fu Lin
- 中文摘要: This paper demonstrates that, based on a study of the junction leakage currents of p-n diodes and the capacitance-voltage (C-V) characteristics of metal-oxide-silicon (MOS) capacitors, an aluminum mask can be used to shield against mega-electron-volt (MeV) proton bombardment, which is used to pattern semi-insulating regions on silicon wafers for radio frequency integrate circuits (RF IC) and/or mixed-mode circuits.
- 英文摘要: --
- 中文關鍵字: proton bombardment, RF IC, mask, junction leakage, flatband shift, annealing
- 英文關鍵字: --