• 作者： 王水進; 吳三連
• 作者服務機構： 國立成功大學電機工程學系微電子研究室
• 中文摘要： 本文旨在報導一種三端i-Si/i-Ge0.4Sio.6/3-doped-Si異質結構之電特性實驗結果。此結構在77K溫度下，Geo.4Sio.6通道內電洞之移動率高達2650 cm2/V.s，並在0.91～１．4V偏壓範圍內，於汲－源兩極問呈現極顯著之負微分電阻特性。實驗數據顯示通道內電洞之實空問轉移係造成微分電阻特性之主因。文中將分別對磊晶層之成長、元件之製造、1-V量測、以及操作原理進行說明與討論。有關集極漏電電流對汲－源兩端負微分電阻特性之影響將作深入之探討。
• 英文摘要： In this paper, observation of the negative differential resistance (NDR) phenomenon in a three-terminal pseudomorphic i-Si/i-Ge0.4Sio.6/δ-doped-Si heterostructure is reported. The proposed structureoffers high hole mobility of about 2650 cm2/V.s at 77 K in the Ge0.4Si0.6 channel and shows a pronouncedNDR property in the drain-source I-V characteristics．The measured onset drain-source voltage of theNDR region is found to be within a range of 0.91～1.4 V, which strongly depends on the collector voltage.Real-space transfer (RST) of light holes between the channel and collector regions is shown to be responsiblefor the observed NDR characteristics．Experiment results and the device operation are described．Inaddition, the influence of the drain-collector leakage current, due to a non-ideal undoped layer, on theNDR behavior is analyzed.
• 中文關鍵字： negative differential resistance; real space transfer; GeSi heterostrure; peak-to-valley current ratio; onset voltage
• 英文關鍵字： --