• 作者： 呂助增
• 作者服務機構： 國立清華大學物理系暨電機系教授
• 中文摘要： 本文首先對非晶型半導體載子之激發及衰變作一詳盡之介紹，理論和實驗之數據皆顯示載子之容積結合半衰期約在5微秒附近。我們利用自製之微微秒氮氣紫外線雷射，配合一阻抗匹配之樣品台及一儲存示波器，即可測得非晶型矽內低導電率及短半衰期之載子生命期。無需借助昂貴之儀器設備，為本實驗之特色，理論上亦修正前人對Geminate re-combination之模式。
• 英文摘要： Generation and recombination processes in amorphous semiconductors have been reviewed. Boththeoretical and experimental studies show that the volume recombination in sputtered a-Si:H is about 5 s.Picosecond N lasers characterized with ultra-short pulsewidth, high peak power, and simple detectioninstallation is implemented in diagnosing carrier behaviors of amorphous semiconductors which have lowdrift mobility and short lifetime. No meticulous optical components and electronic system are involvedin this detection.
• 中文關鍵字： amorphous silicon; geminate recombination; picosecond lasers
• 英文關鍵字： --