• 作者： Liang, Gou-Tsau; Wu, Jin-Jane; Chang, Dawsonet al.
• 中文摘要： 本論文以氯化甲烷為碳源從事低溫鑽石薄膜合成之研究,實驗結果顯示基板溫度低於 600.degree.C時,氯化甲烷仍可成長品質良好之鑽石薄膜,但甲烷則否。在熱鎢絲系統以四氯化碳為碳源,可於380.degree.C低溫下成功合成鑽石膜,成長速率為0.05.mu.m/hr。使用直流電漿系統時,可將低溫鑽石薄膜成長速率大幅提升,以三氯甲烷為碳源,在基板溫度500及300.degree.C之成長速率分別為3及0.9.mu.m/hr。對於氯化甲烷適宜低溫合成鑽石膜之原因,作者將分別就氣相與固相表面反應兩方面探討之。
• 英文摘要： Chloromethane (CH/sub 2/Cl/sub 2/, CHCl/sub 2/ and CCl/sub 4/) was utilized in this present work as a carbon source for growing a diamond film at a low temperature(ranging from 300.degree.C to 700. degree.C). Chloromethane was quite suitable for the growth of diamond at a low substrate temperature, as indicated from a comparison with methane with methane which was difficult to grow a diamond below 600.degree.C. Diamond growth was possible even at 380.degree.C (growth rate=0.05.mu.m/hr), which was the lowest temperature possible in our hot-filament CVD system, by using CCl/sub 4/ reactant. On the other hand, chloromethane could rapidly grow faceted diamond crystallites at low temperature (3.mu.m/hr at 500.degree.C, and 0.9.mu.m/hr at 300.degree.C when using CHCl/sub 3/) by DC plasma CVD method. Possible explanations involving the gas phase and surface reaction mechanisms were proposed for diamond film growth using chloromethane reactants.
• 中文關鍵字： 鑽石薄膜; 氯化甲烷; 化學氣相沈積; 低溫成長; 表面反應機構; 基層板溫度
• 英文關鍵字： Diamond Film; Chloromethane; Chemical Vapor Deposition; Low Temperature Growth; Surface Reaction Mechanism; Substrate Temperature