- 作者: 林國經
- 作者服務機構: Radioisotope Laboratory; Union Inustrial Research Institute Ninistry of Ecenomic Affairs; Hsinchu
- 中文摘要: Effects of gamma and alpha irradiations on the surface of single crystal siliconhave been studied mainly using optical techniques. It has been found that gammairradiation produces no surface effect at doses lower than 3x1018 photons per cm2.At doses above 4 x 1018 photons per cm2, the effect is detectable but still too weakfor detailed analysis. Alpha bombardment produces a markedly observable surfacelayer. The infrared absorption as well as electrical conductivity of this "damagedlayer" are different from the "undamaged" region of the same specimen. Experimen-tal results suggest that the alpha induced surface layer is formed by lattice defectsintroduced by the collisions of alpha particles with the lattice silicon atoms toproduce primary and a great number of secondary displacements. Owing to thepoor penetration power of alpha particles in silicon, these lattice defects can onlybe produced in a thin surface layer in the specimen. This alpha induced thin surfacelayer is obviously different from the gamma-induced one.
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