• 作者： 程一誠；戴國仇
• 中文摘要： Solid source molecular beam epitaxy (SSMBE) using valved cracking cells as sources of group V fluxes is a novel technology for growing phosphorus-based compound semiconductors. The use of valved solid phosphorus sources avoids previous difficulties associated with the use of solid phosphorus and the use of phosphine. The growth study and characterization of high quality epitaxial layers with SSMBE mainly focus on In/sub x/Ga/sub 1-x/P in this report. With a growth temperature of 490 .degree.C and a V/III beam equivalent pressure (BEP) flux ratio of 6-9, a high optical quality In/sub x/Ga/sub 1-x/P epitaxial layer can be grown. The sharpness of the arsenic/phosphorus interface is revealed by using an Auger electron spectroscopy (AES) depth profiler and high-resolution transmission electron microscope (HRTEM).
• 英文摘要： --
• 中文關鍵字： SSMBE, InGaP, valved cracker, AES, V/III ratio
• 英文關鍵字： --