• 作者： 陳茂傑; 陳春男; 雷添福
• 作者服務機構： 國立交通大學電子工程系及電子研究所
• 中文摘要： 　　本文探討多數二維無限長結構物與斜向線性規則入射波之交互作用。利用邊異阻尼與有限元素法來解析波浪繞射、漫射問題。文中計算(1)雙體型，二互不連接結構物之交互作用；(2)浮動式結構物與一滲透性直立式碼頭之交互作用；(3)繫泊與結構物間互制力之影響。本文之有限元素解亦與已知之多數奇異解、邊異元素解等互相比較，以證實其準確性
• 英文摘要： The effect of the poly-Si gettering scheme on the defects in the silicon epitaxial layer and on the pnjunction performance has been investigated. Wright and anodic etching techniques and the MOS retentiontime method were employed to investigate the gettering effect of defect reduction. In addition, the influ-ence on the pn junction leakage, threshold voltage and the breakdown characteristic by the getteringschemes were also investigated, Promising results have been observed with respect to defect reduction andpn junction performance improvement. The optimal thickness of the poly-Si film for the gettering purposewas determined to be 1.5 to 2.5 μm.
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