第5卷‧第3期,
198107
, pp. 232-239
簡併壓電半導體內能帶構造之磁聲效應
- 作者:
吳啟宗
- 作者服務機構:
國立交通大學應用數學系
- 中文摘要:
利用在高頻和強磁場皆適用之量子力學處理方法,研討拋物線與非拋物線能帶對於如N型銻化錮之簡併壓電半導體之效應。假設超聲波傳播之方向與靜磁場B成任一角度θ,而導電子與超聲波之交互作用是由形變位能與壓電耦合機構所形成。結果顯示,對於拋物線模型與非拋物線模型之能帶結構,吸收係數與聲速變化率在超聲波沿著靜磁場方向傳播時,會依磁場強度而產生振動。然而,若θ角不等於零時,則對於拋物線模型之吸收係數與聲速改變率不會因磁場而產生振動。所以拋物線能帶結構似乎不宜用來解釋在極低溫度下簡併堅電半導體物質之磁聲效應。
- 英文摘要:
Effects of parabolic and nonparabolic band structures on ultrasonic waves propagating at an angleθ relative to the direction of dc magnetic field B in a degenerate semiconductor such as n-type InSb areinvestigated by using a quantum treatment which is valid at high frequencies and in strong magnetic fields.Deformation-potential and piezo-electric couplings provide the avenues for the interaction of conductionelectrons with ultrasonic waves. The absorption coefficient and change in sound velocity oscillate withthe do magnetic field when ultrasonic waves propagate along the dc magnetic field for both parabolic andnonparabolic band structures. However, if the angle θ is different from zero, the absorption coefficientand change in sound velocity do not oscillate with the dc magnetic field for the parabolic band structure.Consequently, it seems that the parabolic band structure can not be used to explain the magnetoacousticeffects of degenerate semiconductors in the very low temperature limit.
- 中文關鍵字:
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- 英文關鍵字:
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