• 作者： 龍文安; 何銘燦; 洪維民
• 作者服務機構： 國立交通大學應用化學研究所
• 中文摘要： 　　聚甲基苯基矽烷（PMPS）加入少量α，α，α，α′，α′，α′－六氯－對－二甲苯（HCPX），經334nm紫外光曝光，基主鏈斷鏈反應可大為增強。PMPS＋20wt％HCPX旋轉塗佈於矽晶片上，厚度0.9μm，曝光劑量100 mJ／c㎡，曝後烤80℃，20 min，可自我顯像。相同條件下，如未加HCPX，曝光劑量大至1 J／c㎡，PMPS 仍無法自我顯像。
• 英文摘要： The main chain scission of Poly(methylphenylsilane) (PMPS) is greatly enhanced by the addition ofa small amount of α,α,α,α′,α′,α′-hexachloro-p-xylene (HCPX), The 0.9μm thickness resist system ofPMPS+20wt% HCPX on silicon water achieves self-development under exposure doses of 100 mJ/c㎡at 334 nm and post-exposure bake at 80℃ for 20 min. Under the same conditions, PMPS without HCPXshows no self-development up to exposure doses of 1 J/c㎡. Other polysilanes would have similar enhance-ment of their exposure sensitivities by the addition of HCPX.
• 中文關鍵字： poly(methylphenylsilane); α,α,α,α′,α′,α′-hexachloro-p-xylene; self-development
• 英文關鍵字： --