• 作者： 洪銘盤
• 作者服務機構： 成功大學礦冶及材料學系
• 中文摘要： 因氣相生長晶體所需設備較簡單，所得晶體缺陷較少晶面整齊，著者乃仿 Piper-Polich 方法試製 CdTe 單晶體。生長後之粉末晶體經X線繞射分析確定為 CdEe。因管內蒸氣過飽和度較大，且生長管移動時發生輕微磨擦作用，致使無法獲得單晶體。其生長速度與溫度差略成為直線關係，係屬樹枝晶體生長狀態其速度由擴散支配。 所得碲化鎘係由八顆晶粒所成之多晶體·，其中若干晶粒含有雙晶構造，沿多晶體劈面切開所得之單晶體試樣其有陽型導電性，其室溫載子濃度為1.68×10 ，室溫比電阻為313 ohm-cm，蝕孔密度為10 cm ，分光分析結果顯示有銅，鋁，錮，矽，鈣等原素之存在。
• 英文摘要： Since vapor-grown crystals have perfectly flat external surfaces and less crystaldefects, it is aimed to prepare CdTe single crystals from the vapor phase by amodification of Piper and Polich method. Powder crystal after growth was identifiedas CdTe by the X-ray diffration method. It was, however, not able to obtain CdTesingle crystals in this case because of the unduly high degree of supersaturation ofthe vapor and the rubbing action between a growth ampoule and an attachmentduring travelling. The growth rate is approximately linear with the temperaturedifference, indicating that the growth of crystals is dendritic and the rate is diffusion·controlled. A vapor-grown CdTe boule was a polycrystal consisted of eight grains, some ofwhich had twin structures. A single crystal cut from a CdTe boule had a holeconcentration of 1.68×1014 cm ，a resistivity of 313 ohm-cm at room temperature,and an etch pit density of 10 cm . The sectrographic analysis of CdTe powdersindicated the presence of Cu, Al, In, Si, Ca, etc.
• 中文關鍵字： --
• 英文關鍵字： --