- 作者: 陳龍英
- 作者服務機構: College of Engineering National Chiao Tung University
- 中文摘要: MOS structures have been made using a Au ion-implanted SiO layer thermallygrown on silicon. The effects of oxide thickness, and post-implantation treatmenthave been studied by means of I-V, C-V, and pulse measurements. These structureswith 500 to 1,000 A oxides implanted with 10 cm Au ions at 50-100 KeV havebeen measured. The ion distribution is assumed Gaussian distribution. Most of theinterface states created by the implantation damage anneal at 400 C. The carrier transport mechanism of the implanted SiO layer is found to beconverted from Fowler-Nordheim tunneling conduction to Frenkel-Poole bulk con-duction with a trapping energy level 1.2 eV below the oxide conduction band. Theresulting MOS structure behaves similarly to a floating gate or double-layer memorydevice. The time required for I-V flatband shift is about 10 sec when a field of10 V/cm is applied. The above results are consistent with theoretical predictionsbased on the assumption that the localized Au ions serve as a charge storagecenter.
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