- 作者: Sho-Ching Hong, Ming-Shun Ho, Hsiu-Feng Lu and Ying-Chieh Sun
- 中文摘要: In the present study, we report the calculated lifetimes of the first hydrogen stretching excited state on a hydrogen-covered H/Ge(111) germanium surface using molecular dynamics simulation based on the Bloch-Redfield theory. The lifetime was found to be 20 microseconds at room temperature, four orders longer than the hydrogen stretches on a H/Si(111) silicon surface. In addition, the calculations for the Ge-D and Ge-T stretches gave lifetimes in the time scale of hundreds and tens of nanoseconds, respectively, at room temperature. The thermal effect and an effect of the Ge-Ge-H bending frequency in the calculated lifetimes are discussed.
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