• 作者： Hsu, Chi-Chung; Lee, Lang-Luen; Tsai, Dah-Shyang
• 中文摘要： 我們以分子模擬方法分析，兩片4吋晶圓，間格5釐米的空間內，溫度973K、壓力0.1、1、10 Torr下，矽甲烷化學氣相沉積。氣相反應方面考慮四個反應步驟，其中第一步矽甲烷分解成SiH/sub 2/與氫的步驟，作詳細的反應動力模擬；表面反應方面包括SiH/sub 4/、 SiH/sub 2/、Si/sub 2/H/sub 6/、Si/sub 3/H/sub 8/四個的沈積反應。矽甲烷的附著係數在所有成膜分子中最低，是矽甲烷化學氣相沈積享有均勻沈積厚度的主要原因， Si/sub 2/H/sub 6/、 SiH/sub 2/兩者的附著係數均高，是厚度不均勻的貢獻者。模擬結果顯示，當壓力由0.1增至1 Torr時，發生有趣的Si/sub 2/H/sub 6/、SiH/sub 2/兩者角色互換，當矽甲烷壓力低時，SiH/sub 2/更可能碰撞晶圓而沈積，它在沈積速率所佔的份量高於Si/sub 2/H/sub 6/，但是，當壓力高時，SiH/sub 2/傾向於插入SiH/sub 4/或 H/sub 2/生成 Si/sub 2/H/sub 6/或Si/H/sub 4/，因而 Si/sub 2/H/sub 6/取代SiH/sub 2/成為沈積厚度不均勻的主要貢獻者。
• 英文摘要： Chemical vapor deposition of monosilane between two 4-inch wafers with 5mm wafer spacing is simulated at molecular level under 973K and 0.1, 1.0, 10 Torr. Four gas-phase reactions are considered, with a detailed reaction kinetics simulation on the first decomposition step of SiH/sub 4/ to yield H/sub 2/ and highly reactive SiH/sub 2/. Also four surface reactions of SiH/sub 4/, SiH/sub 2/, Si/sub 2 /H/sub 6/, Si/sub 3/H/sub 8/ are included in simulation. Monosilane, with its lowest sticking coefficients among film-forming species, is the major reason for thickness uniformity over large area in silane CVD. Si/sub 2/H/sub 6/ and SiH/sub 2/, both of higher sticking coefficients, are the contributors of film thickness non-uniformity. The simulation results indicate an interesting role switching between disilane and silylene as SiH/sub 4/ pressure varies from 0.1 to 1 Torr. When SiH/sub 4/ pressure is low, SiH/sub 2/ has a higher probability to impinge on the wafer surface and deposit. Its contribution to deposition rate is higher than that of Si/sub 2/H/sub 6/. On the other hand, when the pressure is high, SiH/sub 2/ tends to insert itself into SiH/sub 4/ or H/sub 2/ to generate Si/sub 2/H/sub 6/ or SiH/sub 4/. Therefore disilane becomes the primary factor of non-uniformity, instead of silylene.
• 中文關鍵字： 化學氣相沈積; 矽烷; 甲硅烷; 分子模擬
• 英文關鍵字： Chemical Vapor Deposition (Cvd); Silane; Silylene; Molecular Simulation