• 作者： 蔡曜聰; 鄧欽霖
• 作者服務機構： 國立中央大學電機工程學系
• 中文摘要： 本篇文章研究以等效電路模型法在HSPICE上作二維元件和電路的混階模擬。所謂等效電路模型法，就是將傳統用來描述元件載子傳輸的模型轉換成等效電路模型。如此一來，元件模擬變成了電路模擬，不但可用電路模擬器來做元件模擬而且可以和一般的電路結合，形成混階模擬。首先，我們先推導二維的等效電路模型，然後裝入HSPICE中，並以二極體切換電路為例子作混階模擬，探討因少數載子儲存效應所造成的延遲時聞。接下來是 SOS（semiconductor-oxide-semiconductor）元件的模擬，並將此技術應用於次微米金氧半結構之元件上。此方法有助於我們更深入了解元件或製程參數對電路特性的影響，以及元件在實際電路所造成的動態邊界條件下的特性變化。
• 英文摘要： This paper presents an equivalent circuit approach to 2D numerical mixed-level device and circuitsimulation using HSPICE. In this paper, Poisson's and continuity equations are formulated into a subcircuitformat suitable for general circuit simulators such as HSPICE. In other words，the device is convertedto an equivalent circuit model, which changes the device simulation problem into a circuit analysis problemand allows simultaneous solution of an electrical network containing both nonlinear circuit elements andnumerical models of devices. Different from conventional approaches, our approach is conceptually simple,and the extension of this model to three-dimensional device simulation is straightforward．The utilityof this approach in mixed-level simulation is demonstrated through transient analysis of diode switchingcircuit, SOS (semiconductor-oxide-semiconductor) test circuit and submicron MOSFET simulation usingHSPICE.
• 中文關鍵字： HSPICE; device simulation; SOS; MOSFET
• 英文關鍵字： --