- 作者: 李舉賢
- 作者服務機構: College of Engineering National Taiwan University
- 中文摘要: Techniques of preparing multiple junctions on a germanium waferhave been studied. To fabricate two P-N junctions on an n-typegermanium base, indium was applied on the wafer surface by alloyingand diffusion methods. Fabrication techniques, such as chemical etching,alloying, and diffusion process were studied. It has been found thatthe after-etching process is important since the reverse saturationcurrent seems to be limited by this process. The reverse current wasfound to be only a few thousandths of that of the original current,the current before etching. In alloying, the furnace operating temper-ature was 550oC which generally introduced an optimum base-thickness. Hybrid parameters, a cutoff frequencies, and transition capacitancewere measured experimentally for some typical specimes. The experi-mental value of a at Ie=I ma was observed to be 0.929 and the cutofffrequency was found to be 524 kc/sec, These values were comparedwith their corresponding theoretical values of 0.989 and 875 kc/sec andfound a small discrepancy between the experimental and theoreticalvalues.
- 英文摘要: --
- 中文關鍵字: --
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