• 作者： 蔡曜聰; 袁蓓安; 徐建明
• 作者服務機構： 中央大學電機系
• 中文摘要： 本篇文章開始主要是針對非晶矽薄膜電晶體發展出一套二維的元件模擬器。此模擬器是使用一有效率的解析型陷阱載子模型來計算其陷阱載子濃度。其次我們採用了Michael Shur在論文上所發表的非晶矽薄膜電晶體之電路模型。經由此電路模型，電晶體之電流大小便可用一組電路參數正確地計算出來。最後我們提出一個反向模型的方法。經由此方法，我們可以直接由一組電流一電壓曲線上萃取出相對的電路參數。而這些萃取出的電路參數便可運用在積體電路之設計上。更進一步，我們還可萃取出此電流－電壓曲線相對應之陷阱能階之分佈。
• 英文摘要： In this paper, first, a two-dimensional device simulator for an a-Si TFT is developed. This simulatoris based on an efficient analytical model for calculating the trapped charge density Secondly, we adopta circuit model which originated from the publication of Michael Shur. From this circuit model, the draincurrent can be accurately expressed through a set of circuit parameters. Finally, we propose a methodologyfor reverse modeling. By means of this methodology, we can extract the circuit parameters from the I-V curves directly. Also, the extracted circuit parameters can be used in integrated-circuit design. Moreover,we go on to extract the parameters representing the distribution of DOS for the IN curves.
• 中文關鍵字： 2-D device simulator; circuit model; reverse modeling; a-Si TFT
• 英文關鍵字： --