- 作者: 裘性天 ; 吳佩芳
- 作者服務機構: 交通大學應用化學研究所
- 中文摘要: (Me/sub 3/Si)/sub 2/SiMe/sub 2/,(Me/sub 3/Si)/sub 3/SiMe and (Me/sub 3/Si)/sub 4/Si were used as precursors for the deposition of polycrystalline.beta.-SiC thin films on silicon substrates at 1000-1200.degree.C in a low-pressure hot-wall chemical vapor deposition reactor. The thin films were analyzed by X-ray diffraction, scanning electron microscopy and X-ray photoelectron spectroscopy.
- 英文摘要: --
- 中文關鍵字: Low-Pressure Chemical Vapor Deposition; Silicon Carbide Thin Film; X-Ray Diffraction; Scanning Electron Microscopy (Sem)
- 英文關鍵字: 低壓化學氣相沈積;碳化矽薄膜;X射線散射;掃描式電子顯微鏡