• 作者： 白松豐太郎；吳添壽；楊在三
• 作者服務機構： 國立成功大學電機工程研究所
• 中文摘要： 本研究係利用不同原子價之摻雜物作氧化鎘陶金型電阻體中之原子價控制。電阻係數及電流雜訊指數隨原子價幾乎成直 線性的增加，TCR隨原子價之增加?有減少之趨向。將氧化銅當做摻雜物摻入氧化鎘主體時，對電阻係數及電流雜訊指數 之降低，具有顯著效果。此現象可由電荷遷移機構解釋?起因於CuδCd1-δO非組成比複合物之形成。當δ?在0.039時 ，電阻係數、TCR及電流雜訊指數顯示?最小?。主體及摻雜金屬離子之半徑大小亦會影響其電特性。
• 英文摘要： Control of valency in cadmium oxide thick film glaze resistors using dopant of different kind of valency was studied. Sheet resistivity and current noise index increase almost linearly with valency of dopant. On the other hand TCR decrease with increasing valency of dopant. Cuprous oxide added to host cadmium oxide as dopant has prominent effect of decreasing sheet resistivity and current noise index. This phenomenon is explained by charge transfer mechanism suggesting the formation of non-stoichiometric compound which is expressed as CuδCd1-δO. When value of δ is 0.039, sheet resistivity, TCR and current noise index show minimum value. The radii of both host and dopant metal ions also affect to electrical properties.
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