• 作者： Boman, M. ; Bauerle, D.
• 作者服務機構： Angewandte Physik, Johannes-Kepler-Universitat Linz, Linz, Austria
• 中文摘要： Ar/sup +/ laser-induced chemical vapor deposition(LCVD) of B from gaseous mixtures of BCl/sub 3/ and H/sub 2/ has been investigated for temperatures between 1000K and 2250K and for partial pressure within the ranges 25 mbar.ltoreq.p(BCl/sub 3/). ltoreq.800 mbar and 10 mbar.ltoreq.p(H/sub 2/).ltoreq.400 mbar. For the lowest temperatures, deposition is controlled by the chemical kinetics which, with p(BCl/sub 3/)=p(H/sub 2/)=100 mbar, is characterized by an apparent chemical activation energy of about 26.5kcal/mol. In this regime, the deposited boron is amorphous. At high temperatures, deposition becomes limited by gas-phase transport and polycrystalline boron with.beta.-rhombohedral structure is obtained.
• 英文摘要： --
• 中文關鍵字： Boron; Laser-Induced Chemical Vapor Deposition; Temperature; Chemical Kinetic; Activation Energy
• 英文關鍵字： 硼；雷射誘導化學蒸氣沈積；溫度；化學動力學；活化能