- 作者: 林鴻志; 王夢凡; 簡昭欣; 黃調元; 張俊彥
- 作者服務機構: 國家毫微米實驗室; 國立交通大學電子工程學系
- 中文摘要: 本文回顧國家毫微米實驗室,在探討電漿金屬蝕刻製程時,充電現象對電晶體薄氧化層損害效應之研究成果。我們利用自行設計的測試結構,偵測評估兩種六吋生產型電漿金屬蝕刻機台,磁場加強式(MERIE)及螺旋波電漿(HWP)的相關特性,並比較數種不同的測試技巧。結果顯示,對八毫微米厚的薄氧化層而言,MERIE會對元件造成明顯的破壞;另一方面,HWP蝕刻後的元件仍維持良好的特性。我們也發現,利用崩潰電荷量測法和起始電子捕獲率法都能有效展示相關的損害效應,但後者較敏感也較有效率。我們另外提出一種量測閘極漏電流的測試程序,可有效且迅速的分析損害效應。
- 英文摘要: Gate oxide damage induced by plasma charging during metal etching with a magnetic-enhancedreactive ion etcher (MERIE) or helicon wave plasma (HWP) etcher and subsequent resist ashing wasinvestigated. Metal-oxide-semiconductor (MOS) capacitors and n-channel transistors connected to an metalantenna were used to monitor the damage. For capacitor test structures, we used the initial electron trappingslope (IETS) and time-dependent dielectric breakdown (TDDB) methods to characterize the damage. Theresults indicated that the IETS indicator was more efficient than the TDDB method. It was also observedthat serious damage could occur during the MERIE processing, especially for those devices located inthe edge region. In contrast, devices treated through HWP processing exhibited good performance incomparison with the control devices.Consistent results were also obtained by characterizing the antenna-type transistor performance.It was also found that the antenna effect could be clearly illustrated bymeasuring the gate current.
- 中文關鍵字: plasma ; metal-oxide-semiconductor ( MOS ) transistor; antenna effect
- 英文關鍵字: --