- 作者: 張昭鼎; 劉桂寧; 呂正理
- 作者服務機構: 國立清華大學化學系
- 中文摘要: 粗矽直接氯氫化後所得之三氯矽甲烷可作進一步的純化使其雜質(硼及磷)的含量低至百萬分之一的程度。純化步驟乃先利用路易士酸及鹼處理,然後作雙重蒸餾。本實驗中採用更靈敏的方法去定量硼與磷。高純度矽中的磷含量則採用中子活化分析。
- 英文摘要: Further purification of the critical impurities, boron and phosphorus, atppm level in trichlorosilane obtained by direct hydrochlorination of crudesilicon with anhydrous hydrogen chloride was performed by means of doubledistillation following the treatment of Lewis acids and bases, More sensi-tive spectrophotometric procedures were devised for the determination ofboron and phosphorus at ppm level. The phosphorus content in highpurity silicon was determined with neutron activation analysis.
- 中文關鍵字: --
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