• 作者： 呂助增
• 作者服務機構： 國立清華大學物理系暨電機系
• 中文摘要： 在此總論中，我們簡短的介紹過去數年來，在國科會支援下所作有關肖特基能障二極體之物理特性，製造技術，以及應用。對於結晶性及非晶性半導體之能障高度，與介面層特性之關係將分別討論，再者電流傳遞藉量子穿遂效應與能量轉換效率，亦將述及。另外紅外線肖特基影像感測器成行列編排者，也特在本文介紹。
• 英文摘要： In this review, we briefly condense our recent works on studies of the physics, fabrication techno-logies and applications of Schottky barrier diodes (SBD). Factors that influence Schottky barrier heightsof both crystalline and amorphous semiconductors in the presence of interfacial layer will be discussed. Thecurrent transport phenomena due to quantum tunneling will be calculated to predict the photoconversionefficiency. Infrared Schottky barrier image sensor in mosaic arrays will be introduced for exploiting a newapplication of SBDs. This work was supported by the National Science Council of the Republic of China.
• 中文關鍵字： crystalline and amorphous Schottky barrier height; current transport; IR image sensor
• 英文關鍵字： --