• 作者： 吳慶源;戴永文;陳興海
• 作者服務機構： 國立交通大學工學院電子研究所
• 中文摘要： 本文提出一種具單一通道離子佈植N通道加強型金氧半場效電晶體之電流一電壓特性曲線的準確及簡單模型，其中小幾何結構、接觸及連線的雜散電阻等效應均考慮在內。最重要的是，本文所發展出的模型可將元件結構及製程詳加考慮在內，故只要利用單一組的結構及製程導向參數，即可準確地模擬各種不同通道長度與寬度的元件特性。為了證實此種能力，我們利用測試鍵在生產線上製造一批具單一通道離子佈植之N通道加強型金氧半場效電晶體，並加以詳細計測。實驗測出的電流一電壓特性均與發展的模型作比較；在相當廣範圍的通道長度、寬度及背閘電壓變化下均相當吻合。同時，製程及結構導向參數的粹取法亦在本文中討論。
• 英文摘要： This paper presents an accurate and simple simulation model for the I-V characteristics of small-geometry n-channel enhancement mode MOSFETs with single-channel-boron-implantation, in which thesmall-geometry effects and the parasitic resistances due to contact and interconnection have been included.Most importantly, the developed model takes the device structure and processes into consideration and,therefore, can accurately simulate the fabricated devices of different channel lengths and widths using anunique set of structure- and process-oriented parameters. In order to show these capabilities, the n-channelenhancement mode MOSFETs with single-channel-born implantation fabricated in a production line usinga set of testkey have been measured and characterized. Comparisons between the measured I-V character-istics and the developed model have been made and excellent agreement has been obtained for wide rangesof channel lengths and widths, and applied back-gate biases. Moreover, the methods of extracting theprocess- and structure-oriented parameters have been discussed.
• 中文關鍵字： small-geometry MOSFET; V model; single-channel-boron implantation; VLSI design model and simulation
• 英文關鍵字： --