• 作者： 黃翼賢; 楊銀圳
• 作者服務機構： 國立清華大學
• 中文摘要： A 100Kev linear accelerator has beenset up to study ion implantation techno-logy. P-N junction has been observedin p-type silicon implanted by nitrogenions, which exhibit donor properties.The radiation damages produced duringthe implantation can be annealed out inthe temperature range：500-900 C. Itis shown that about 850 C annealing isrequired to obtain a minimum junction-leakage current. However, this leakagecurrent is still larger than that of bor-on- or phosphorus-implanted silicon.Some special MOSFET'S have been fabri-cated and tested. The carrier concent-ration of the nitrogen-implanted regionhas been found to be low. It is ex-pected that our experience will offersome help to the ion-implantation tech-nique project of the NSC Master Deve-lopment Plan.
• 英文摘要： --
• 中文關鍵字： --
• 英文關鍵字： --