第6卷‧第2期,
198204
, pp. 107-116
使用?差及蒸氣壓控制法作砷化鎵雙層磊晶成長之研究
- 作者:
魏?權;蘇炎坤;劉濱達;張忠誠;盧水泉
- 作者服務機構:
國立成功大學電機工程系學系
- 中文摘要:
水平推動法應用於本液態磊晶?差法成長系統,從砷化鎵對鎵的稀釋溶液?,成長單層或多層的砷化鎵,矽是被採用 ?添加物,摻雜於砷化鎵成長層?,其對鎵溶質的重量百分比?10一4 。 本實驗對於成長層的成長率、表面結構、載子濃度、錯位密度、赫爾(Hall)移動率、電阻係數和成長?度以及溶液溫 差的關係加以探討,一般而言,限制擴散的模型是符合於實驗結果,成長層的厚度能加以計算、控制,況且對流於此實驗 系統能被抑制,而且只要系統的?度不變,過冷?的效應亦可摒除,此結果可使成長的介面穩定度增加,所以在適當的操 作之下,可以成長良好的磊晶層和簡單的多層磊晶層。
- 英文摘要:
Liquid phase epitaxial growth of a horizontal sliding system by temperature difference method is utilized to grow single layers of GaAs compounds from dilute solution. The weight ratio of Si to Ga solvent is l0-4wt.% throughout of this experiment. The growth rate, carrier concentration, Hall mobility and surface morphology of epilayer are studied. The relationship between properties mentioned and growth temperature, temperature difference between source and substrate are also discussed. Under proper control, a perfect epilayer can be obtained.
- 中文關鍵字:
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- 英文關鍵字:
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