- 作者: 翁恆義;黃惠良
- 作者服務機構: 國立清華大學電機工程研究所
- 中文摘要: 本文討論近來在碲化鎘與銅銦化二硫晶體之P型摻雜效應方面所作的研究。利用磷離子佈植及脈衝電子束褪火之技術,可在上述二晶體中獲得1019cm-3以上之電洞濃度,此實驗結果可由雜質分佈、缺陷分佈及缺陷理論中之模型來加以解 釋。
- 英文摘要: This paper reviews the recent developments of p-type doping in CdTe and CuInS2. In both cases, hole concentrations exceeding 1019 cm-3 have been obtained with phosphorus ion implantation and pulsed electron beam annealing. The implant- and damage- profiles, and the atom redistributions after the annealing were calculated to explain the experimental results. Defect models were proposed to further illustrate the doping mechanisms.
- 中文關鍵字: defect structure; doping CdTe; CuInS2
- 英文關鍵字: --