• 作者： 翁恆義；黃惠良
• 作者服務機構： 國立清華大學電機工程研究所
• 中文摘要： 本文討論近來在碲化鎘與銅銦化二硫晶體之P型摻雜效應方面所作的研究。利用磷離子佈植及脈衝電子束褪火之技術，可在上述二晶體中獲得1019cm-3以上之電洞濃度，此實驗結果可由雜質分佈、缺陷分佈及缺陷理論中之模型來加以解 釋。
• 英文摘要： This paper reviews the recent developments of p-type doping in CdTe and CuInS2. In both cases, hole concentrations exceeding 1019 cm-3 have been obtained with phosphorus ion implantation and pulsed electron beam annealing. The implant- and damage- profiles, and the atom redistributions after the annealing were calculated to explain the experimental results. Defect models were proposed to further illustrate the doping mechanisms.
• 中文關鍵字： defect structure; doping CdTe; CuInS2
• 英文關鍵字： --