• 作者： 余健治
• 作者服務機構： 國立臺灣師範大學
• 中文摘要： 點電荷模型被用來計算在 CdTe 單晶體內的 Yb3+-單價貴金屬雜質的晶體電場能階
  以及光譜分裂因子。對Yb3+－3Cu+ 而言，晶體電場能階的最低能階是一個二重態，其
  g 值為 2.667。這個計算值與實驗所得之值甚為符合。對Vlb3+-3Cu+而言，晶體電場的
  軸成分比正立方成分為強，因此，最低能階是一個二重態，其Jz═士7/2。此二重階
  之g11═8 g ═0，比起實驗而言，gu值較大。
• 英文摘要： Point-charge model has been used to calculate the stark energy levelsand the spectroscopic splitting factors of the Yb3+-monovalent noble metalassociates in single crystals of cubic CdTe. For Yb3+-4 Cu+ (Ag+，Au+)associates, the ground state of the Stark levels is a doublet I6. The cal-culated point-charge model g-value of this doublet is g═2.667, which isin agreement with the experimental value obtained by Watts and Holton.For Yb3+-3 Cu+ associates, the point-charge model calculation shows thatthe ground state of the Stark levels is essentially a doublet Jz═士7/2, forwhich g11 ═ 8 and g ═0. This indicates that the calculated axial componentof the crystal field is much stronger than the cubic field component.Therefore, the point-charge model g11 value is greater than the experimen-tally observed value.
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