• 作者： 胡振國; 盧維新
• 作者服務機構： 台灣大學電機工程學系
• 中文摘要： 本文研究利用液相沉積法再加快速熱氧化所得含氟閘極氧化層之抗輻射特性。實驗發現接受1M rads (Si )公鈷六十輻射塵量元件之抗輻射能力與液相沉積時間密切有關。經由選擇液相沉積時間為30分鐘之元件其抗輻射能力遠優於純快速熱氧化生長之元件。根據傅立葉轉換紅外線吸收數據可知本研究所提方法製造之含氟氧化層比傳統純快速熱生長所得氧化層具有較少量之受應力Si-O-Si鍵結。
• 英文摘要： The radiation hardness of fluorinated gate oxides obtained by liquid phase deposition (LPD) followinga rapid thermal process (RTP) in O (RTO) was studied. It was found that the radiation hardness of thedevices after receiving Co irradiation with a total dose of 1 Mrads (Sio )depended strongly on the LPDgrowth time. An optimum device with its fluorinated gate oxide prepared by choosing an LPD growthtime of 30 minutes showed much better improvement in radiation hardness than did the conventional RTOdevice. According to the Fourier transform infrared (FTIR) absorbance data, it was suggested that thefluorinated oxides discussed in this work contain smaller amounts of strained Si-O-Si bonds than do theconventional rapid thermal oxides.
• 中文關鍵字： MOS device; thin gate oxide; liquid pahse deposition; rapid thermal process
• 英文關鍵字： --