• 作者： 陳錦揚; 胡振國
• 作者服務機構： 國立臺灣大學電機工程學系
• 中文摘要： 本文研究氧化生長壓力在快速熱薄閘極氧化層特性上之效應。純氧氣及氧和氮氣混合均用來做為氧化生長之環境。時變介質崩潰(TDDB)及抗輻射特性做為金氧半結構元件之好壞判斷用。實驗發現不同厚度氧化層之元件會呈現不同之行為。在純氧氣環境下，低氧化壓力可改善初始氧化層特性，但卻會造成TDDB特性之退化。至於抗輻射特性則與氧氣壓力不太有關係。當氮氣加入氧氣環境時，部份之退火效應將出現，進而改善了初始氧化層特性及TDDB特性，但是抗輻射特性卻明顯地退化了。
• 英文摘要： The characteristics of rapid thermal thin gate oxides are studied with respect to the oxidation pressure.Both pure ambient and a mixture of ambient are used for the oxidation environment. The time-dependent-dielectric-breakdown (TDDB) and radiation hardness properties are examined for devices havinga metal-oxide-semiconductor (MOS) structure. It is found that samples with different oxide thicknessesexhibit quite different behavior. In pure ambient, low oxidation pressure improves the initial oxideproperty but degrades the TDDB. Radiation hardness shows little dependence on pressure. Whenis added into ambient, a partial annealing effect occurs which improves the initial oxide propertyand TDDB endurance but degrades the radiation hardness significantly.
• 中文關鍵字： MOS device; rapid thermal oxidation; pressure
• 英文關鍵字： --