• 作者： Tzeng, G.S.; Wan, C.C.
• 中文摘要： 本論文研究在不同脈波電流鍍銅條件下,鍍層之結構及微硬度受不同陰離子(硫酸根、氟硼酸根、過氯酸根、氟離子等)的影響。以脈波電流密度,通電時間和斷電時間作為實驗的變數,所得鍍層之結構與微硬度分別以掃描式電子顯微鏡(SEM)和微硬度測試儀測試之。實驗發現,在相同脈波電鍍條件下,硫酸根離子對鍍層微硬度的影響遠較氟硼酸根及過氯酸根離子為大,含硫酸根離子鍍液所得鍍層之微硬度也較氟離子鍍液者為高。這些可能的原因在文中均有詳細的討論。我們實驗也發現,不同陰離子鍍液對過電壓,鍍層顆粒大小或微硬度間的影響有很密切的關連。
• 英文摘要： The effect of anions including SO/sub 4//sup 2-/, BF/sub 4//sup -/, ClO/sub 4//sup -/ and F/sup -/ on the surface structure and the microhardness of copper deposits under pulsed current conditions were investigated. The parameters involved the pulsed current density, pulsed-on time and pulsed-off time. The structure and microhardness were examined by scanning electron microscopy and microhardness tester measurement. SO/sub 4//sup 2-/ ions were found to have more marked effect on the microhardness than BF/sub 4//sup -/ or ClO/sub 4//sup -/ ions under the same pulsed plating conditions; possible reasons are discussed. Sulfate bath which produces copper deposits with higher microhardness than that of fluoride bath are also studied. We also found a correlation between the anion effect on the overpotential and on the deposits grain size or microhardness.
• 中文關鍵字： 脈波電流; 銅鍍層; 微硬度; 陰離子效應; 掃描式電子顯微鏡; 脈波電鍍; 形態學
• 英文關鍵字： Pulse Current; Copper Deposit; Microhardness; Anion Effect; Scanning Electron Microscopy (Sem); Pulse Plating; Morphology