• 作者： 魏炯權; 蘇炎坤; 盧水泉; 張忠誠
• 作者服務機構： 國立成功大學電機工程研究所
• 中文摘要： N型砷化鎵（摻矽）基板上成長雙層高低結構之砷化鎵薄膜後蒸著鋁膜作為金屬一半導體接觸即得蕭特基(Schottky)變容二極體。在反向偏壓3伏及25伏時，變容二極體之電容比值為4.46；其反向漏電流至崩潰前低於3×10 安培；理想因數為1.11。如果二極體適中地於10伏及470百萬赫操作時預期其品質因數可達120。
• 英文摘要： The Schottky barrier varactor diode with high-low structure has been successively fabricated byevaporating aluminum onto the surface of this double epitaxial layer. The capacitance ratio of the diodeat V=3.0 and 25 volts is 4.46. The reverse leakage current prior to breakdown is less than 3 x 10 ampand with an ideality factor of 1.11. If the diode is moderately operated at 10 volts and 470 MHz, a qualityfactor of 120 is expected.
• 中文關鍵字： schlttky barrier varactor diode; double-epitaxial layer; reverse leakage current; ideality factor; quality factor
• 英文關鍵字： --