• 作者： 黃惠良;楊末雄;孫澄源;徐子民
• 作者服務機構： 國立清華大學;國立中央大學
• 中文摘要： 在半導體研究的歷史上，先由矽、鍺週期表上第四族的元素推廣至二、六及三、五族化合物半導體的研究。尤有進之，近世又更進一步推向 1、3、6及2、4、5族化合物半導體進行研究。目的在於瞭解該等材料製作與物理性質，以為元件之製作奠定基礎。在本文中，吾人將專門討論CuInS2-三元化合物半導體有關其材料製備，成分分析，激光光譜及波長調制光譜等研究，並作為國科會過去八年連續支持本計畫部份成果的總結。本文針對CulnS2單晶的製備特別提出「熱區移動法」加以討論，對CulnS2薄膜製備特別提出「三蒸鍍源法」加以討論。對磊晶的製備特別就LPe及MOCCD所衍生的問題加以討論。本文亦比較化學及物理方法分析CuInS2組成成分之優劣，作為研究該等材料的基礎。在前述材料及成分分析的基礎上，本文特別應用光激光技術及波長調制反射光譜技術分析CulnS2單晶及薄膜有關能階及其中能位的各項關係。並與現行所發表之文獻相比較。
• 英文摘要： In this review article, we particularly discuss several important aspects of a ternary chalcopyritesemiconductor-CuInS2, which include its material preparation, compositional analysis, photoluminescence,and wavelength-modulated reflectance data. The travelling heater method if found to be the best one among several techniques investigated togrow large well-shaped single crystals to be used in experiments. A singularly designed three sources eva-poration has been developed to prepare thin film with accurate and reproducible control on composition.To obtain epitaxial layers, both LPE and MOCVD techniques have been tried. A thorough discussion onorganocopper compounds is presented. A correlation between the composition and the properties is very important in understanding seml-conduction materials. The applicabilit and the limitations of the physical and chemical methods in com-positional analysis have been established particularly for two Cu I-III-IV2 compounds. The results of photoluminescence experiments show a series of very complex transitions betweenthe energy states in the band structure, and suggest that at least two donor levels and two acceptor levelsmay exist. Our WMR data strongly indicate the CuInS2 has a direct energy gap of 1.535±0.005 eV at roomtemperature.
• 中文關鍵字： CuInS2; Materials preparation; physical & chemical properties
• 英文關鍵字： --