- 作者: 裘性天 ; 李淑芬
- 作者服務機構: 交通大學應用科學系
- 中文摘要: 1,1-dimethyl-1-silacyclobutane was used as a single-source precursor to deposit SiC thin films on Si(100) and Si(111) by low-pressure chemical vapor deposition (LPCVD). Polycrystalline .beta.-SiC thin films were grown at temperatures 1100 and 1200. degree.C. At temperatures between 950 and 1100.degree.C, amorphous thin films of silicon carbide were obtained. The films were studied by X-ray diffraction (XRD), infrared spectroscopy(IR), scanning electron microscopy (SEM), scanning transmission electron microscopy (STEM), and electron diffraction (ED).
- 英文摘要: --
- 中文關鍵字: Low-Pressure Chemical Vapor Deposition; 1,1-Dimethyl-1-Silacyclobutane; Silicon Carbide; Thin Film
- 英文關鍵字: 低壓化學氣相沈積;1;1-二甲基-1-矽環丁烷;碳化矽;薄膜