• 作者： Chou, Kan-Sen; Lee, Yu-Hua
• 中文摘要： 本文係針對使用水平式氣相沈積反應器,以進行汞鎘碲(MCT)磊晶生長的實驗及理論分析。生長實驗使用二甲基鎘、二乙基碲及汞作為原料,氫氣作為載流氣體,吾人運用輸送現象之公式計算反應器中之流動形態及水銀濃度分布,結果發現在氫氣中加入汞原子後,將會引發好幾個漩渦,並大大改變反應器內氣體流動形態,其主要原因是汞的原子量(200)遠大於氫的分子量之故。至於汞分壓分布,計算顯示它會沿著流動方向遞減,此與實驗觀察所得磊晶膜內HgTe份量減少之情形相符。MCT磊晶的一些其他特性,如載子濃度、運動速度,晶格結構的完美性,也一併於文中報導。
• 英文摘要： The growth of mercury cadmium telluride (HgCdTe, MCT) films in a horizontal CVD reactor were investigated both experimentally and theoretically in this paper. Dimethylcadium, diethyltelluride and mercury were employed as precursors and hydrogen as the carrier gas. The flow dynamics and mercury pressure profiles in the reactor were analyzed here on the basis of the equations of transport phenomena. The inclusion of mercury in the carrier gas induced several vortices and changed the flow patterns quite significantly. The heavy molecular weight of mercury (200 versus 2 for hydrogen) was the primary reason for this occurrence. As for the Hg pressure profile, our calculations showed a continuous decrease in the direction of flow toward the susceptor. This result was in qualitative agreement with observed experimental data with regards to the compositions of films. Other properties of these grown MCT films, i.e. carrier concentration and mobility, and structural perfection were also reported.
• 中文關鍵字： 汞鎘碲; 流動型態; 有機金屬氣相磊晶法; 化學氣相沈積反應器; 載子濃度; 金屬有機化學蒸鍍法
• 英文關鍵字： Mercury Cadmium Telluride (Mct); Flow Dynamics; Omvpe; Cvd Reactor; Carrier Concentration; Mocvd