• 作者： 朱惠美
• 作者服務機構： 中原大學物理系
• 中文摘要： 非自洽侷限虛位能方法及虛晶體近似法被採用於計算半導體三元合金砷化鋁鎵系列，單原子層（砷化鎵）-（砷化鋁） 和（砷化鎵） -（砷化鋁鎵） 異質接面等材質之能帶結構及其電子特性。此外，並建立砷化鋁鎵及（砷化鎵）1一（砷化鋁鋒）1合金系列最重要的價帶和導帶問躍遷能量，對其組成成份的依附關係。 經由比較顯示計算的結果與可獲得的實驗數值非常吻合。
• 英文摘要： The non-self-consistent local pseudopotential techniq ues together with the virtual-crystal-approxima-tion are used to calculate the detailed band structures and electronic properties of the Ga - AQ As ternaryalloy,(GaAs) - (A As) and (GaAs) - (Ga . A . AS) monolayer heterostructures. Theoretical calcula-tions are presented for the most important transition-energy between valence and conduction bands E(x)as a function of the composition x for the Ga - A xAs ternary alloy and (GaAs) -(Ga . A . As) mono-layer heterostructure. Good agreement is found between calculated results and experimental measurements. Furthermore,from comparison, it is also found that the Ga . A . As ternary alloy and (GaAs) -(Ga . A . As) mono-layer heterostructure both have a direct band gap, while the (GaAs) -(A As) monolayer heterostructurehas either a direct or an indirect band gap.
• 中文關鍵字： pseudopotential; optical-electronic properties; band gaps; form factors; photoemissive spectra; dielectric function
• 英文關鍵字： --