- 作者: Bu, Y. ; Lin, M.C.
- 作者服務機構: Dept. of Chemistry, Emory Univ., Atlanta, Georgia, U.S.A.
- 中文摘要: In and Ga nitride films have been deposited on various substrates using organometallics and hydrazoic acid(HN/sub 3/) as nitrogen precursor. The film deposition was carried out under low pressure (10/sup -5/-10/sup -6/ Torr) and low V/III ratios (1- 10). XPS analysis indicated that the In(Ga):N atomic ratio of unity can be easily achieved by adjusting the experimental conditions. For the growth of InN on Si(100) substrate, 308-nm photon beam is needed to speed up the film deposition rate. He(II) UPS spectra of InN films are in good agreement with the result of a pseudo-potential calculation for InN valence band, while the spectra of GaN compare favorably with a recent semi-ab-initio calculation and with the UPS results of GaN single crystal films. The bandgap of our GaN films is-3.3eV as determined by photoluminescence and UV-VIS absorption spectra. Raman spectra taken from GaN films showed peaks at 66 and 88 meV for TO and LO phonons, respectively, indicating a wurtzite structure of the GaN. In a corresponding X-ray diffraction spectrum, the (002) peak is about 400 times more intense than that of the (101) peak, suggesting that the GaN layers are highly oriented with the c-axis normal or nearly so to the Al/sub 2/O/sub 3/ substrate.
- 英文摘要: --
- 中文關鍵字: Gallium Nitride; Indium Nitride; Hydrazoic Acid; Chemical Vapor Deposition
- 英文關鍵字: 氮化鎵;氮化銦;氫化疊氮;化學蒸氣沈積