- 作者: 洪銘盤; 張炎輝
- 作者服務機構: National Cheng Kung University
- 中文摘要: Twenty-three varieties of CdTe films were prepared in a vacuum of 5×10 torrwith different substrate temperatures (50, 75, 100, 125 and 150 C), source temperatures(600, 710 and 800 C) and heat treatments. All the films were subjected to the deter-mination of microscopic, crystalline and chemical structures by using an electronmincroscope and an X-ray diffratometer. The experimental result indicates thateach film consists of CdTe, the crystal structure of which belongs to zinc blendetype, and preferred orientation is observed for the annealed films, (111), (110) and(311) of which are parallel to (100) of a NaCI substrate. Dark resistivities (25 C)of films are in the order of 10 ohm-cm, and no substantial change of resistivity andconduction has taken place after the specific heat treatment except the coarseningof deposited crystallites. The mean free path of a career is found to be about300 A.
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