• 作者： 羅正宗; 林敏雄; 彭建雄; 詹益仁
• 作者服務機構： 國立清華大學電機工程學系
• 中文摘要： 矽佈植砷化鎵化合物半導體經由傳統高溫熱處理或雙重熱處理程序退火後，其微結構缺陷及電性的變化顯著不同，試樣經過雙重熱處理程序退火後，差排的尺度會變大五至十倍，而其密度則顯著降低，砷化鎵禁帶中的捕捉載體陷井濃度則因差排擴張而明顯降低，因而促使活化載體的濃度得以提高，由進一步的研究得知，此種雙重熱處理退火技術對離子佈植後之化合物半導體的電性改良特別具有潛力。
• 英文摘要： The variation of microstructural defects and electrical properties of Si implanted GaAs, annealed bythe conventional thermal process or the two-step process, have been studied and compared by transmissionelectron microscopy (TEM), deep level transient spectroscopy (DLTS) and Hall effect measurement. Thepresence of entangled dislocation loops, larger prismatic dislocation loops and dislocation lines are observedin the two-step annealed GaAs. DLTS results show that there are four electron traps (Ec-0.38eV, Ec-0.52eV, Ec-0.74eV and Ec-0.86eV) and two hole traps (Ev+0.74eV and Ev+0.86eV) in both post-implantationannealed specimens. The trap concentrations of Ec-0.38eV and Ev+0.86eV can be efficiently reduced bya two-step annealing process. As a result, the electrical properties correlate well with the variation of de-fects observed in Si implanted GaAs during annealing. Both the Hall carrier mobility and the activity ofthe two-step annealed specimen are higher than that of the thermally annealed specimen. It is believed thatthe two-step annealing process can improve the electrical performance for devices and may have particularapplication to ion implanted GaAs.
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