- 作者: 王水進; 蔡豪益; 林鴻仁
- 作者服務機構: 國立成功大學電機工程學系微電子研究室
- 中文摘要: 本文旨在報導有關多孔矽超晶格結構之製備及其室溫下之1-V特性。於實驗方面,計採用A與B兩種方法,前者於陽極氧化過程中,週期性進行紫外光照射;後者則週期性改變其氧化蝕刻電流大小。利用這兩種方法所製得之多孔矽超晶格結構皆具有極顯著之負微分電阻特性,室溫下其峰-谷電流比值介於2.6與5.1之問。此種負微分電阻特性,可能係因載子於某些相鄰多孔矽層之量子能階上行共振穿透傳導所造成。文中將討論有關方法A中每週期光照時問長短及方法B中每週期低蝕刻電流時聞長短對負微分電阻特性之影響。
- 英文摘要: In this paper, the preparation and electrical properties of silicon porous superlattice (SPS) negativedifferential resistance (NDR) diodes are presented. Two different methods (namely, method A and methodB) were employed for the fabrication of SPSs. In method A, the anodization was performed under periodicalultraviolet (UV) illumination while in method B,the anodization was carried out under periodical modulationof the etching current density.For both types of SPS diodes, strong NDR with a peak-to-valley currentratio in the range of 2.6-5.1 was observed at room temperature.It was presumed that a resonant tunnelingmechanism analogous to that which occurs in conventional resonant tunneling diodes with a double barrieror a superlattice structure might have been responsible for the observation results.The influence of theUV illumination interval in method A and the low current interval in method B on the NDR characteristicsof the SPS diodes are discussed. In addition, the photo sensitive NDR characteristics of SPS diodes usingmethod B are also reported
- 中文關鍵字: porous silicon; superlattice; negative differential resistance; anodization; peak-to-valley current ratio; resonant tunneling
- 英文關鍵字: --